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  Datasheet File OCR Text:
 30 10V 25 4.5V 20 3V
20 16 2.5V 12 8 Vds=5V
Id (A)
15 10 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics Vgs=2V
Id (A)
125C 4 25C 0 0 0.5 1 1.5 2 2.5 3 Vgs (Volts) Figure 2: Transfer Characteristics
60 50 Vgs=2.5V
1.7
Normalized On-Resistance
1.6 1.5 1.4 1.3 1.2 1.1 1 0.9
Id=5A
Vgs=4.5V Vgs=10V
Rds(on) (m:)
40 30 20 10 0 5 10 15 20 Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=4.5V
Vgs=2.5V
Vgs=10V
0.8 0 50 100 150 200 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature
70 60
1.0E+01
Id=5A
Is Amps
1.0E+00 1.0E-01
125C
Rds(on) (m:)
50 40 30 20 10 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C
1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.00 25C
0.25
0.50
0.75
1.00
1.25
1.50
Vsd (Volts) Figure 6: Body diode characteristics
5 4
1500 Vds=15V Id=6.9A 1250 f=1MHz Vgs=0V Ciss
Capacitance (pF)
Vgs (Volts)
1000 750 500 250 0 Coss
3 2 1 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge characteristics
Crss
0
5
10
15
20
25
30
Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Rds(on) limited Tj(max)=150C Ta=25C 1ms 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 100Ps
40 Tj(max)=150C Ta=25C 30
Id (Amps)
10.0
Power W
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton Single Pulse T 0.01 0.1 1 10 100 1000
0.01 0.00001
0.0001
0.001
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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